PART |
Description |
Maker |
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存 512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
EDD5108ADTA-6BLI EDD5116ADTA-6BLI EDD5116ADTA-7ALI |
32M X 16 DDR DRAM, 0.75 ns, PDSO66 512M bits DDR SDRAM WTR (Wide Temperature Range)
|
ELPIDA MEMORY INC
|
HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72D32001GR-8-A HYS72D32001GR-7-A HYS72D16000GR- |
Registered DDR SDRAM-Modules Registered DDR SDRAM-Modules 注册DDR SDRAM内存模块 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Infineon Technologies AG Infineon Technologies A...
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HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
AS4DDR32M72PBG1-6_ET AS4DDR32M72PBG1-6_IT AS4DDR32 |
32M X 72 DDR DRAM, 0.8 ns, PBGA208 16 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor, Inc
|
HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD116M725BL8-H HYMD116M725BL8-J HYMD116M725BL8-K |
Unbuffered DDR SDRAM SO-DIMM 16Mx72|2.5V|J/M/K/H/L|x9|DDR SDRAM - SO DIMM 128MB 16Mx72 | 2.5V的|焦九龙/升| X9热卖| DDR SDRAM内存- 128MB的内存苏
|
Hynix Semiconductor http:// Atmel, Corp.
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